Authors: Kun Yu, Hua Wang
Institution：Sino IC Technology Co, ., Ltd, ., Shanghai
Keywords：hard IP core；system on chip (SOC)；testing technology；evaluation circuit；memory；automatic test equipment (ATE)
doi：10.33079/jomm.19020201
Abstract：
Based on the analysis of the existing hard IP core testing technology, the hard IP core nondestructive testing technology was studied, according to the verification requirements of a large number o...
Authors: Huiling Zhu, Paul Blackborow
Institution：Energetiq Technology, Inc, ., 7, Constitution Way, Woburn
Keywords：laser-driven；brightness；broadband；deep-UV；metrology；LDLS
doi：10.33079/jomm.19020104
Abstract：
Laser-driven light sources (LDLS) have ultrahigh-brightness and broad wavelength range. They are ideal radiation sources for optical metrology tools for advanced process control in semiconductor ma...
Authors: Qiang Wu
Institution：Shanghai IC R, &, D Center, Shanghai
Keywords：image projection photolithography；imaging contrast；exposure latitude；mask error factor；linewidth uniformity；chemically amplified photoresist；phase shifting mask；optical proximity correction；and photoacid diffusion length
doi：10.33079/jomm.19020101
Abstract：
Photolithography has been a major enabler for the continuous shrink of the semiconductor manufacturing design rules. Throughout the years of the development of the photolithography, many new techno...
Authors: Xingyu Zhou, Youling Yu
Institution：Tongji University, Shanghai
Keywords：lithography；hotspot detection；CNN；deep learning
doi：10.33079/jomm.18010205
Abstract：
In the advanced semiconductor lithography manufacturing process, the sub-wavelength lithography gap may cause lithographic error and the difference between the wafer pattern and mask pattern which ...
Authors: Mark Neisser
Institution：Kempur Microelectronics, Beijing
Keywords：lithography roadmap；IRDS；advanced patterning；EUV lithography；directed self-assembly (DSA)；Ebeam direct write；Nanoimprint
doi：10.33079/jomm.18010204
Abstract：
Technology roadmaps have been a part of the semiconductor industry for many years. The first roadmap was Moore’s law, which started as an empirical observation that competitive forces then turned i...
Authors: Yijiang Shen, Zhenrong Zhang
Institution：Guangdong University of Technology
Keywords：computational lithography；variational level set；source and mask optimization；coupling image
doi：10.33079/jomm.18010203
Abstract：
This paper addresses the contributing factors in lithographic source and mask optimization, namely, the accuracy of the image formation model and the efficiency of the inverse imaging calculations ...
Authors: Xu Ma, Zhiqiang Wang, Gonzalo R. Arce
Institution：Key Laboratory of Photoelectronic Imaging Technology and System of Ministry of Education of China, School of Optics and Photonics, Beijing Institute of Technology, China
Keywords：Computational lithography；source mask optimization (SMO)；compressive sensing (CS)；inverse problem
doi：10.33079/jomm.18010202
Abstract：
Source and mask joint optimization (SMO) is a widely used computational lithography method for state-of-the-art optical lithography process to improve the yield of semiconductor wafers. Nowadays, c...
Authors: Man Zhang, Qiling Deng, Hui Pang et al.
Institution：Institute of Optics and Electronics, Chinese Academy of Sciences
Keywords：Double-sided nanostructure, elastic substrate, soft-nanoimprinting lithography, metal layer.
doi：10.33079/jomm.18010201
Abstract：
Double-sided nanostructure has more excellent properties in high efficiency, high yield, and high capability devices, which becomes the attention spots in nanofabrication technology. We proposed a ...
Authors: Lithotechsolutions.org
doi：10.33079/jomm.18010105
Abstract：
China's IC industry has been flourishing in recent years, huge market demand together with government investments are the major driving forces for this development. The status and development momen...
