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Vol 3 (4) : 20030405 2020
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First-principles Simulations of Tunneling FETs Based on van der Waals MoTe
2
/SnS
2
Heterojunctions with Gate-to-drain Overlap Design
Kun Luo
,
Kui Gong
,
Jiangchai Chen
,
Shengli Zhang
,
Yongliang Li
,
Huaxiang Yin
,
Zhenhua Wu
DOI:
10.33079/jomm.20030405
: 2020 - 10 - 06
: 2020 - 12 - 14
: 2020 - 12 - 30
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